Search results for " Nitrogen Incorporation"

showing 2 items of 2 documents

Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of Sputtering-Deposited Al-Ta alloys

2016

Anodic films were grown to 20 V on sputtering-deposited Al–Ta alloys in ammonium biborate and borate buffer solutions. According to glow discharge optical emission spectroscopy, anodizing in ammonium containing solution leads to the formation of N containing anodic layers. Impedance measurements did not evidence significant differences between the dielectric properties of the anodic films as a function of the anodizing electrolyte. Photoelectrochemical investigation allowed evidencing that N incorporation induces a red-shift in the light absorption threshold of the films due to the formation of allowed localized states inside their mobility gap. The estimated Fowler threshold for the intern…

Photoelectrochemical characterization Nitrogen Incorporation Anodizing Sputtering-Deposited Al-Ta alloysSettore ING-IND/23 - Chimica Fisica Applicata
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Photoelectrochemical evidence of Nitrogen Incorporation during Anodizing of valve metals alloys

2015

Amorphous and/or nanocrystalline oxide films can be easily prepared electrochemically by anodizing. The anodizing allows to grow oxides with structural and compositional features easily and strictly controlled by the process parameters.

Photoelectrochemical characterization Nitrogen Incorporation Anodizing valve metals alloys
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